2N2219A

Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 300 MHz
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 0.6 A
Maximum Operating Temperature : + 175 C
Package / Case : TO-39


Pinout




Specifications

Ratings	Symbol	2N2218 2N2219	2N2218A; L 2N2219A; L	Unit
Collector-Emitter Voltage	VCEO	30	50	Vdc
Collector-Base Voltage	VCBO	60	75	Vdc
Emitter-Base Voltage	VEBO	5.0	6.0	Vdc
Collector Current	IC	800		mAdc
Total Power Dissipation @ TA = +25(1) @ TC = +25(2)	PT	0.8 3.0		W W
Operating & Storage Junction Temp. Range	Top, Tstg	-55 to +200

Parameters:

Technical/Catalog Information	2N2219A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-39-3, Metal Can
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N2219A 2N2219A 497 2595 5 ND 49725955ND 497-2595-5