Transistors Bipolar (BJT) NPN Ampl/Switch
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 65 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 10 at 10 uA at 10 V | Configuration : | Single |
Maximum Operating Frequency : | 60 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-39 |
Packaging : | Box |
Technical/Catalog Information | 2N2102 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 15mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-39-3, Metal Can |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N2102 2N2102 497 2636 5 ND 49726365ND 497-2636-5 |