2MI50F-050

The 2MI50F-050 is designed as N channel silicon power MOSFET.

It has five features. (1)Low on-resistance. (2)High current. (3)Insulated to elemets and metal base. (4)Separated two-elements. (5)Include fast recovery diode. Those are all the main features.

Some absolute maximum ratings of 2MI50F-050 have been concluded into several points as follow. (1)Its drain to source voltage would be 500V. (2)Its continuous drain current duty 66% would be 50A. (3)Its pulsed drain current would be 150A. (4)Its gate-source peak voltage would be +/-20V. (5)Its max power dissipation would be 400W. (6)Its continuous reverse drain current would be 50A. (7)Its operating temperature range would be 150°C. (8)Its storage temperature range would be from -40°C to 125°C. (9)Its Isolation test voltage AC 1min would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some 2MI50F-050 electrical characteristics are concluded as follow. (1)Its drain-source breakdown voltage would be min 500V. (2)Its gate threshold voltage would be min 2.1V and typ 3.0V and max 4.0V. (3)Its zero gate voltage drain current would be max 1.0mA. (4)Its drain to sourceleakage current would be max 100nA. (5)Its forward transconductance would be typ 45S. (6)Its drain to source on-state resistance would be max 0.11ohm. (7)Its input capacitance would be typ 7.8nF. (8)Its output capacitance would be typ 0.9nF and max 1.5nF. (9)Its reverse transfer capacitance would be typ 0.4nF and max 0.6nF. (10)Its switching time would be typ 530ns and max 750ns for ton and would be typ 700ns and max 1000ns for toff and would be typ 80ns and max 110ns for tf. (11)Its diode forward on-voltage would be typ 1.4V and max 1.8V. (12)Its reverse recovery time would be max 150ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!