Specifications Items Symbols Conditions MaximumRatings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous 400 A ICP 1ms 800 -IC 400 -Ic pulse 1ms 800 Collector Power Dissipation Pc 1 devic...
2MBI400TB-060: Specifications Items Symbols Conditions MaximumRatings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous 400 ...
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DescriptionThe 2MBI100N-060-03 has six features.(1)square RBSOA.(2)low saturation voltage.(3)less ...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Items | Symbols | Conditions | Maximum Ratings |
Units | |
Collector-Emitter voltage | VCES | 1200 | V | ||
Gate-Emitter voltage | VGES | ±20 | V | ||
Collector current | IC | Continuous | 400 | A | |
ICP | 1ms | 800 | |||
-IC | 400 | ||||
-Ic pulse | 1ms | 800 | |||
Collector Power Dissipation | Pc | 1 device | 1270 | W | |
Junction temperature | Tj | +150 | oC | ||
Storage temperature | Tstg | -40 to +125 | oC | ||
Isolation voltage |
between terminal and copper base (*1) | Viso | AC : 1m | 2500 | VAC |
Screw Torque |
Mounting- | 3.5 | N m | ||
Terminals | 3.5 |