DescriptionThe 2MBI400TA-060 is designed as one kind of IGBT module device that has some points of absolute maximum ratings:(1)Collector-Emitter voltage: 600 V;(2)Gate-Emitter voltage: ±20 V;(3)Collector current Ic: 400 A;(4)Collector current IF: 400 A;(5)Collector Power Dissipation: 1270 W;(6)Jun...
2MBI400TA-060: DescriptionThe 2MBI400TA-060 is designed as one kind of IGBT module device that has some points of absolute maximum ratings:(1)Collector-Emitter voltage: 600 V;(2)Gate-Emitter voltage: ±20 V;(3)Coll...
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DescriptionThe 2MBI100N-060-03 has six features.(1)square RBSOA.(2)low saturation voltage.(3)less ...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
The 2MBI400TA-060 is designed as one kind of IGBT module device that has some points of absolute maximum ratings:(1)Collector-Emitter voltage: 600 V;(2)Gate-Emitter voltage: ±20 V;(3)Collector current Ic: 400 A;(4)Collector current IF: 400 A;(5)Collector Power Dissipation: 1270 W;(6)Junction temperature: 150 ;(7)Storage temperature: -40 to +125 ;(8)Isolation voltage: 2500 V;(9)Screw Torque Mounting: 3.5 N.m;(10)Screw Torque Terminals: 3.5 N.m.
The electrical characteristics of 2MBI400TA-060 can be summarized as:(1)Zero gate voltage Collector current: 2.0 mA;(2)Gate-Emitter leakage current: 400 nA;(3)Gate-Emitter threshold voltage: 6.2 to 7.7 V;(4)Collector-Emitter saturation voltage: 1.9 V;(5)Input capacitance: 30000 pF;(6)Output capacitance: 5200 pF;(7)Reverse transfer capacitance: 4500 pF;(8)Reverse recovery time: 0.3 s. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .