Features: · High speed switching· Voltage drive· Low inductance module structureApplication· Inverter for Motor drive· AC and DC Servo drive amplifier· Uninterruptible power supply· Industrial machines, such as Welding machinesSpecifications Item Symbol Conditions Rating Unit Collector...
2MBI300U2B-060: Features: · High speed switching· Voltage drive· Low inductance module structureApplication· Inverter for Motor drive· AC and DC Servo drive amplifier· Uninterruptible power supply· Industrial machi...
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DescriptionThe 2MBI100N-060-03 has six features.(1)square RBSOA.(2)low saturation voltage.(3)less ...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Item | Symbol | Conditions | Rating | Unit | |
Collector-Emitter voltage Gate-Emitter voltage |
VCES VGES |
600 ±20 |
V V | ||
Collector current |
IC ICp -IC -IC pulse |
Continuous 1ms |
300 600 300 600 |
A | |
Collector Power Dissipation Junction temperature Storage temperature |
PC Tj Tstg |
1 device |
1000 +150 -40 to +125 |
W | |
Isolation voltage | between terminal and copper base *1 | Viso | AC:1min. | 2500 | VAC |
Screw Torque | Mounting *2 Terminals *2 |
3.5 3.5 |
N`m |
The 2MBI300U2B-060 is one member of the 2MBI300 family which is designed as the IGBT module (N series) device that can be used in (1)Inverter for Motor drive; (2)AC and DC Servo drive amplifier; (3)Uninterruptible power supply; (4)Industrial machines, such as Welding machines applications.
Features of the 2MBI300U2B-060 are:(1)high speed switching; (2)voltage drive; (3)low inductance module structure. The absolute maximum ratings of the 2MBI300U2B-060 can be summarized as:(1)Collector-Emitter Voltage: 600 V;(2)Gate-Emitter Voltage: ±20 V;(3)Max. Power Dissipation: 300 W;(4)Operating Temperature: +150 °C;(5)Storage Temperature: -40 to +125 °C;(6)Isolation Voltage: 2500 V;(7)Screw Torque: 3.5 Nm.
The electrical characteristics of 2MBI300U2B-060 can be summarized as:(1)Zero Gate Voltage Collector Current: 2.0 mA;(2)Gate-Emitter Leackage Current: 400 nA;(3)Gate-Emitter Threshold Voltage: 6.2 to 7.7 V;(4)Collector-Emitter Saturation Voltage: 2.10 to 2.35 V;(5)Turn-on Time: 0.40 to 1.20 us;(6)Diode Forward On-Voltage: 1.90 to 1.95 V;(7)Reverse Recovery Time: 350 ns;(8)Turn-off Time: 0.48 to 1.20 us. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .