Specifications Items Symbols Conditions MaximumRatings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 300 A Tc=80°C 200 Icp 1ms Tc=25°C ...
2MBI200U4H-170: Specifications Items Symbols Conditions MaximumRatings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V Collector c...
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DescriptionThe 2MBI100N-060-03 has six features.(1)square RBSOA.(2)low saturation voltage.(3)less ...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Items |
Symbols |
Conditions |
Maximum Ratings |
Units | ||
Collector-Emitter voltage |
VCES |
1700 |
V | |||
Gate-Emitter voltage |
VGES |
±20 |
V | |||
Collector current |
Ic |
Continuous |
Tc=25°C |
300 |
A | |
Tc=80°C |
200 | |||||
Icp |
1ms |
Tc=25°C |
600 | |||
Tc=80°C |
400 | |||||
-Ic |
200 | |||||
-Ic pulse |
1ms |
400 | ||||
Collector Power Dissipation |
Pc |
1 device |
1040 |
W | ||
Junction temperature |
Tj |
150 |
°C | |||
Storage temperature |
Tstg |
-40 ~ +125 | ||||
Isolation voltage |
between terminal and copper base (*1) |
Viso |
AC : 1min. |
3400 |
VAC | |
Screw Torque |
Mounting (*2) |
- |
3.5 |
Nm | ||
Terminals (*3) |
4.5 |