Features: SpecificationsDescription 2MBI1200UG-170 is an excellent product which will do attract you after readingthis general introduction. Firstly , there are some absolute maximum ratings which is under the condition that Tc is 25°C unless otherwise specified. Collector-emitter voltage(VCES) is...
2MBI1200UG-170: Features: SpecificationsDescription 2MBI1200UG-170 is an excellent product which will do attract you after readingthis general introduction. Firstly , there are some absolute maximum ratings which i...
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DescriptionThe 2MBI100N-060-03 has six features.(1)square RBSOA.(2)low saturation voltage.(3)less ...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
Features: Square RBSOALow Saturation VoltageLess Total Power DissipationImproved FWD Characteristi...
2MBI1200UG-170 is an excellent product which will do attract you after readingthis general introduction. Firstly , there are some absolute maximum ratings which is under the condition that Tc is 25°C unless otherwise specified. Collector-emitter voltage(VCES) is 1700 V. Gate-emitter voltage(VGES) is ±20 V. Collector power dissipation(Pc) is 4960 W. Junction temperature(Tj) is 150. Storage temperature (Tstg) is from -40 to +125. Isolation voltage between terminal and copper base *1 (Vsio) is 3400 VAC when the AC is 1 mimute. Secondly, there are some electrical characteristics which is under the condition that when Tj is 25°C unless otherwise specified about it. Zero gate voltage collector current (ICES) is 1.0 mA max when the VGE is 0 V and VCE is 1700 V. Gate-emitter leakage current (IGES) is 1600 nA under the condition that VCE is 0 V and VGE is ±20 V. Input capcacitance (Cies) is 120 nF typ when the VCE is 10 V , VGE is 0 V and f is 1 MHz. Turn-on (ton) is 1.30 s and Turn-on (tr) is 0.75 s when Vcc is 900 V , Ic is 1200 A, VGE is ±15V,Tj is 125°C, Rgon is 0.1 , Rgoff is 0.4 . Turn-off (toff) is 1.50s and turn-off(tf) is 0.40 s when Vcc is 900 V , Ic is 1200 A, VGE is ±15V,Tj is 125°C, Rgon is 0.1 , Rgoff is 0.4 . Reverse recovery (trr) is 0.45 s when the IF is 1200 A. Lead resistance (temminal-chip) (R lead) is 0.25 m. Thermal resistance characteristics (Rth(j-c)) is 0.0252 °C/W under the condition of IGBT and is 0.042°C/W under the condition of FWD. Contact Thermal resistance(1device)(Rth(c-f)) is 0.004°C/W with thermal compound (*).
Then, there are some notes on 2MBI1200UG-170 storage and transpiration. The first one is that the module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% . The second one is storing modules in a place with few temperature changes in order to avoid condensation on the module surface. The third one is avoidng exposure to corrosive gases and dust.
The forth one is avoiding excessive external force on the module. The fifth one is storing modules with unprocessed terminals. The sixth one is that please do not drop or otherwise shock the modules when transporting.
Well, this is a simple introduction of 2MBI1200UG-170 and if you are interested in it and want to know more about it , please go to our web where you will find more detailed information aboutit , thanks for being concern of our information !