2DB1188R-13, US $ .15-.3 , Diodes Inc., 2DB1188R-13 DataSheet download, circuit diagram from SeekIC.com

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2DB1188R-13: Transistors Bipolar (BJT) 1000W -32Vceo

2DB1188R-13 Data Sheet

US $ .15~.3 / Piece | Get Latest Price

Part Number:: 2DB1188R-13
Mfg:: Diodes Inc.
Supply Ability:: 5000

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2DB1132R-13 evaluate
US $.14 - .32 / Piece

Transistors Bipolar (BJT) 1000W -32Vceo
2DB1188Q-13 evaluate
US $.14 - .26 / Piece

Transistors Bipolar (BJT) 1000W -32Vceo
2DB1188P-13 evaluate
US $.14 - .26 / Piece

Transistors Bipolar (BJT) 1000W -32Vceo

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	32 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	180 at 0.5 A at 3 V	Configuration :	Single Dual Collector
Maximum Operating Frequency :	120 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-89
Packaging :	Reel

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Package / Case : SOT-89
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 2 A
Configuration : Single Dual Collector
Maximum Operating Frequency : 120 MHz
Collector- Emitter Voltage VCEO Max : 32 V
DC Collector/Base Gain hfe Min : 180 at 0.5 A at 3 V

Parameters:

Technical/Catalog Information	2DB1188R-13
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	32V
Current - Collector (Ic) (Max)	2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A
Frequency - Transition	120MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-89-3, TO-243-3
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2DB1188R 13 2DB1188R13 2DB1188RDIDKR ND 2DB1188RDIDKRND 2DB1188RDIDKR

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