SpecificationsMaximum Power Dissipation @ 25 5.3 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 300 mAMaximum TemperaturesStorage Temperature - 65 to + 150 Operating Junction Temperature + 150DescriptionThe 2A8...
2A8-2: SpecificationsMaximum Power Dissipation @ 25 5.3 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 300 mAMaximum ...
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The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. 2A8-2 utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness.