Features: ·Balanced Design Provides Good Output Match·On-Chip Temperature Compensated Output Power Detector·32.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Vol...
29MPA0373: Features: ·Balanced Design Provides Good Output Match·On-Chip Temperature Compensated Output Power Detector·32.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and ...
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Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) |
+6.0 VDC 1700 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF TAble4 MTTF Table4 |
Mimix Broadband's four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. 29MPA0373 also includes Lange couplers to achieve good output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. 29MPA0373 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.