SpecificationsMaximum Power DissipationDevice Dissipation @ 25°C1................................ 500 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)..........................65 VEmitter to Base Voltage (BVebo)...........................3.0 VCollector Current (Ic).......................
2931-150R3: SpecificationsMaximum Power DissipationDevice Dissipation @ 25°C1................................ 500 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)..........................65 VEmitt...
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The 2931-150 is an internally matched, COMMON BASE bipolar transistor capable of providing 150 Watts of pulsed RF output power at 50s pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetic ceramic sealed transistor is specifically designed for S-band radar applications. 2931-150R3 utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.