28F400BV-T

Features:

 Intel SmartVoltage Technology
 -5V or 12V Program/Erase
 -2.7V, 3.3V or 5V Read Operation
 -Increased Programming Throughput at 12V VPP
Very High-Performance Read
 -5V: 60/80/120 ns Max. Access Time,
    -30/40 ns Max. Output Enable Time
 -3V: 110/150/180 ns Max Access
    -65/90 ns Max. Output Enable Time
 -2.7V: 120 ns Max Access 65 ns Max.Output Enable Time
Low Power Consumption
 -Max 60 mA Read Current at 5V
 -Max 30 mA Read Current at 2.7V3.6V
x8/x16-Selectable Input/Output Bus
 -28F400 for High Performance 16- or32-bit CPUs
x8-Only Input/Output Architecture
 -28F004B for Space-Constrained 8-bit Applications
Optimized Array Blocking Architecture
 -One 16-KB Protected Boot Block
 -Two 8-KB Parameter Blocks
 -One 96-KB Main Block
 -Three 128-KB Main Blocks
 -Top or Bottom Boot Locations
Absolute Hardware-Protection for Boot Block
Software EEPROM Emulation with Parameter Blocks
Extended Temperature Operation
 -40°C to +85°C
Extended Cycling Capability
 -100,000 Block Erase Cycles (Commercial Temperature)
 -10,000 Block Erase Cycles (Extended Temperature)
Automated Word/Byte Program and Block Erase
 - Industry-Standard Command User Interface
 - Status Registers
 - Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
 -1 mA Typical ICC Active Current in Static Operation
Reset/Deep Power-Down Input
 -0.2 µA ICCTypical
 -Provides Reset for Boot Operations
Hardware Data Protection Feature
 -Write Lockout during Power Transitions
Industry-Standard Surface Mount Packaging
 -40-Lead TSOP
 -44-Lead PSOP: JEDEC ROM Compatible
 -48-Lead TSOP
 -56-Lead TSOP
Footprint Upgradeable from 2-Mbit and to 8-Mbit Boot Block Flash Memories
ETOX™ IV Flash Technology


Pinout




Specifications

Commercial Operating Temperature
      During Read.................................0°C to +70°C
      During Block Erase
      and Word/Byte Program...............0°C to +70°C
      Temperature Bias.....................10°C to +80°C
Extended Operating Temperature
      During Read.............................40°C to +85°C
      During Block Erase
      and Word/Byte Program...........40°C to +85°C
      Temperature Under Bias ..........40°C to +85°C
Storage Temperature....................65°C to +125°C
Voltage on Any Pin
     (except VCC, VPP, A9 and RP#)
     with Respect to GND..............2.0V to +7.0V⁽²⁾
Voltage on Pin RP# or Pin A9
     with Respect to GND......... 2.0V to +13.5V^(2,3)
V_PP Program Voltage with Respect
     to GND during Block Erase
    and Word/Byte Program.... 2.0V to +14.0V^(2,3)
V_CC Supply Voltage
     with Respect to GND..............2.0V to +7.0V⁽²⁾
Output Short Circuit Current ...................100 mA ⁽⁴⁾


Description

Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. 28F400BV-T are not intended for use in medical,  life saving, or life sustaining applications.

Intel may make changes to specifications and product descriptions at any time, without notice.

The  28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F004BE-T/B may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request.

Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.