28F400BL-T

Features:

Low Voltage Operation for Very
Low-Power Portable Applications
   -V_CC e 3.0V3.6V Read
   -V_CC e 3.15V3.6V Program/Erase
Expanded Temperature Range
   -^₂₀ 70  
x8/x16 Input/Output Architecture
   -28F400BL-T, 28F400BL-B
   -For High Performance and High Integration 16-bit and 32-bit CPUs
x8-only Input/Output Architecture
   -28F004BL-T, 28F004BL-B
   -For Space Constrained 8-bit Applications
Upgradeable to Intel's SmartVoltage Products
Optimized High Density Blocked Architecture
   -One 16-KB Protected Boot Block
   -Two 8-KB Parameter Blocks
   -One 96-KB Main Block
   -Three 128-KB Main Blocks
   -Top or Bottom Boot Locations
Extended Cycling Capability
   -10,000 Block Erase Cycles
Automated Word/Byte Write and Block Erase
   -Command User Interface
   -Status Registers
   -Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
   -0.8 mA typical ICC Active Current in Static Operation
Very High-Performance Read
   -150 ns Maximum Access Time
   -65 ns Maximum Output Enable Time
Low Power Consumption
   -15 mA Typical Active Read Current
Reset/Deep Power-Down Input:
  -0.2 mAI_CC Typical
  -Acts as Reset for Boot Operations
Write Protection for Boot Block
Hardware Data Protection Feature
   -Erase/Write Lockout During Power Transitions
Industry Standard Surface Mount Packaging
   -28F400BL: JEDEC ROM
                        Compatible
                        44-Lead PSOP
                        56-Lead TSOP
   -28F004BL: 40-Lead TSOP
12V Word/Byte Write and Block Erase
    -V_PP e 12V g5% Standard
ETOXTM III Flash Technology
    -3.3V Read


Pinout




Specifications

Operating Temperature
    During Read -20to 70⁽¹⁾
    During Block Erase/Byte Write 0to 70
Temperature Under Bias -20to 80
Storage Temperature -65to 125
Voltage on any Pin
    (except V_CC,VPP,A₉ and RP)
    with Respect to GND -2.0V to 7.0V⁽²⁾
Voltage on Pin RP or Pin A9
     with Respect to GND -2.0V to 13.5V^{(2, 3)}
V_CC Program Voltage with
      Respect to GND
      during Block Erase and
      Word/Byte Write -2.0V to 14.0V^{(2, 3)}
V_CC Supply Voltage
      with Respect to GND -2.0V to 7.0V⁽²⁾
Output Short Circuit Current100 mA⁽⁴⁾



Description

Intel's 4-Mbit Low Power Flash Memory Family is an extension of the Boot Block Architecture which includes block-selective erasure, automated write and erase operations and standard microprocessor interface. 28F400BL-T enhances the Boot Block Architecture by adding more density and blocks, x8/x16 input/output control, very low power, very high speed, an industry standard ROM compatible pinout and surface mount packaging. The 4-Mbit low power flash family opens a new capability for 3V battery-operated portable systems and is an easy upgrade to Intel's 2-Mbit Low Power Boot Block Flash Memory Family.

The Intel 28F400BL-T/B are 16-bit wide low power flash memory offerings. These high density flash memoriesprovide user selectable bus operation for either 8-bit or 16-bit applications. The 28F400BL-T and 28F400BL-B are 4,194,304-bit non-volatile memories organized as either 524,288 bytes or 262,144 words of information.They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages. The x8/x16 pinout conforms to the industry standard ROM/EPROM pinout. The Intel 28F004BL-T/B are 8-bit wide low power flash memories with 4,194,304 bits organized as 524,288 bytes of information. They are offered in a 40-Lead TSOP package, which is ideal for space-constrained portable systems.

These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified word/byte write and block erasure. The 28F400BL-T/28F004BL-T provide block locations compatible with Intel's Low Voltage MCS-186 family, i386TM, i486TM microprocessors. The 28F400BL-B/28F004BL-B provide compatibility with Intel's 80960KX and 80960SX families as well as other low voltage embedded microproces-sors.

The boot block includes a data protection feature to protect the boot code in critical applications. With a maximum access time of 150 ns, 28F400BL-T are very high performance memories at 3.3V which interface to a wide range of low voltage microprocessors and microcontrollers. A deep power-down mode lowers the total VCC power consumption to 0.66 mW which is critical in handheld battery powered systems such as Handy Cellular Phones. For very high speed applications using a 5V supply, refer to the Intel 28F400BX-T/B, 28F004BX-T/B 4-Mbit Boot Block Flash Memory family datasheet.

Manufactured on Intel's 0.8 micron ETOX III process, the 28F400BL-T provides world class quality, reliability and cost-effectiveness at the 4 Mbit density level.