28F320W30

Features:

Flash Performance
-70 ns Initial Access Speed
-25 ns Page-Mode Read Speed
-20 ns Burst-Mode Read Speed
-Burst and Page Mode in All Blocks and
across All Partition Boundaries
-Enhanced Factory Programming:
3.5 µs per Word Program Time
-Programmable WAIT Signal Polarity
Flash Power
-VCC = 1.70 V 1.90 V
-VCCQ = 2.20 V 3.30 V
-Standby Current = 6 µA (typ.)
-Read Current = 7 mA
(4 word burst, typ.)
Flash Software
-5/9 µs (typ.) Program/Erase Suspend Latency
Time
-Intel^® Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
Quality and Reliability
-Operating Temperature:
25 °C to +85 °C
-100K Minimum Erase Cycles
-0.18 µm ETOX™ VII Process
Flash Architecture
-Multiple 4-Mbit Partitions
-Dual Operation: RWW or RWE
-Parameter Block Size = 4-Kword
-Main block size = 32-Kword
-Top and Bottom Parameter Devices
Flash Security
-128-bit Protection Register: 64 Unique Device Identifier Bits; 64 User OTP Protection Register Bits
-Absolute Write Protection with VPP at Ground
-Program and Erase Lockout during Power Transitions
-Individual and Instantaneous Block Locking/Unlocking with Lock-Down
SRAM
-70 ns Access Speed
-16-bit Data Bus
-Low Voltage Data Retention
-S-VCC = 2.20 V 3.30 V
Density and Packaging
-32-Mbit Discrete in VF BGA Package
-64-Mbit Discrete in µBGA* Package
-56 Active Ball Matrix, 0.75 mm Ball-Pitch in µBGA* and VF BGA Packages
-32/4-, 64/8- and 128/TBD- Mbit (Flash + SRAM) in a 80-Ball Stacked-CSP Package (14 mm x 8 mm)
-16-bit Data Bus

`High Performance Read-While-Write/Erase
- Burst Frequency at 40 MHz
- 70 ns Initial Access Speed
- 25 ns Page-Mode Read Speed
- 20 ns Burst-Mode Read Speed
- Burst-Mode and Page-Mode in All Blocks and across All Partition Boundaries
- Burst Suspend Feature
- Enhanced Factory Programming:
3.5 s per Word Program Time
- Programmable WAIT Signal Polarity
`Flash Power
- V_CC = 1.70 V 1.90 V
- V_CCQ = 2.20 V 3.30 V
- Standby Current (130 nm) = 8 A (typ.)
- Read Current = 7 mA (4 word burst, typical)
􀂄 Flash Software
- 5 s/9 s (typ.) Program/Erase Suspend Latency Time
- Numonyx™ Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
`Quality and Reliability
- Operating Temperature:
40 °C to +85 °C
- 100K Minimum Erase Cycles
- 130 nm ETOX™ VIII Process
- 180 nm ETOX™ VII Process
`Flash Architecture
- Multiple 4-Mbit Partitions
- Dual Operation: RWW or RWE
- Parameter Block Size = 4-Kword
- Main block size = 32-Kword
- Top or Bottom Parameter Blocks
`Flash Security
- 128-bit Protection Register: 64 Unique Device Identifier Bits; 64 User OTP Protection Register Bits
- Absolute Write Protection with V_PP at Ground
- Program and Erase Lockout during Power Transitions
- Individual and Instantaneous Block Locking/Unlocking with Lock-Down
`Density and Packaging
- 130 nm: 32Mb, 64Mb, and 128Mb in VF BGA Package; 64Mb, 128Mb in QUAD+ Package
- 180 nm: 32Mb and 128Mb Densities in VF BGA Package; 64Mb Density in BGA* Package
- 56 Active Ball Matrix, 0.75 mm Ball-Pitch
- 16-bit Data Bus

The above info is from (www.seekic.com)




Specifications

Parameter	Note	Maximum Rating
Temperature under Bias		25 °C to +85 °C
Storage Temperature		65 °C to +125 °C
Voltage On Any Signals (except VCC, VCCQ, VPP and S-VCC)	1	0.5 V to +3.80 V
VPP Voltage	1,2,3	0.2 V to +14 V
VCC Voltage	1	0.2 V to +2.40 V
VCCQ and S-VCC Voltage	1	0.2 V to +3.36 V
Output Short Circuit Current	4	100 mA

Parameter	Maximum Rating	Note
Temperature under Bias	40 to +85
Storage Temperature	65 to +125
Voltage on Any Pin (except VCC, VCCQ, VPP)	0.5 V to +3.8 V
VPP Voltage	0.2 V to +14 V	1,2,3
VCC Voltage	0.2 V to +2.45 V	1
VCCQ Voltage	0.2 V to +3.8 V	1
Output Short Circuit Current	100 mA	4

Notes:
1. All specified voltages are relative to VSS. Minimum DC voltage is 0.5 V on input/output pins and 0.2 V on V_CC and V_PP pins. During transitions, this level might undershoot to
2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins is V_CC +0.5 V which, during transitions, might overshoot to V_CC +2.0 V for periods < 20 ns.
2. Maximum DC voltage on VPP might overshoot to +14.0 V for periods < 20 ns.
3. VPP program voltage is normally VPPL. VPP can be 12 V ± 0.6 V for 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase.
4. Output shorted for no more than one second. No more than one output shorted at a time.

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Description

28F320W30 combines state-of-the-art Intel^®Flash technology withlow power SRAM to provide the most versatile and compact memory solution for high performance, low power,board constraint memory applications.

The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash architecture that enables the device to read from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates as compared to single partition devices and it allows two processors to interleave code execution because program and erase operations can now occur as background processes.

28F320W30 incorporates a new Enhanced Factory Programming (EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 µs per word to the standard factory program time of 8.0 µs per word and save significant factory programming time for improved factory efficiency.

Additionally, 28F320W30 includes block lock-down, programmable WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect solution for any demanding memory application.

The Numonyx™ Wireless Flash Memory (W30) device combines state-of-the-art Numonyx™ Flash technology to provide a versatile memory solution for high performance, low power, board constraint memory applications. The W30 flash memorydevice offers a multi-partition, dual-operation flash architecture that enables the flash device to read from one partition while programming or erasing in another partition.

This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates compared to single partition devices. Two processors can interleave code execution, because program and erase operations can now occur as background processes.

28F320W30 incorporates an Enhanced Factory Programming (EFP) mode to improve 12 V factory programming performance. This feature helps eliminate manufacturing bottlenecks associated with programming high-density flash memory devices. The EFP program time is 3.5 s per word, compared to the standard factory program time of 8.0 s per word, so EFP mode saves significant factory programming time for improved factory efficiency.

28F320W30 also includes block lock-down and programmable WAIT signal polarity, and is supported by an array of software tools.

The above info is from (www.seekic.com)