Features: Two 32-Byte Write Buffers -2 µs per Byte Effective Programming TimeOperating Voltage 5V VCC 5V VPP70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit)High-Density Symmetrically-Blocked Architecture -32 64-Kbyte Erase Blocks (16 Mbit)?...
28F160S5: Features: Two 32-Byte Write Buffers -2 µs per Byte Effective Programming TimeOperating Voltage 5V VCC 5V VPP70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 ...
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Two 32-Byte Write Buffers
-2 µs per Byte Effective Programming Time
Operating Voltage
5V VCC
5V VPP
70 ns Read Access Time (16 Mbit)
90 ns Read Access Time (32 Mbit)
High-Density Symmetrically-Blocked Architecture
-32 64-Kbyte Erase Blocks (16 Mbit)
-64 64-Kbyte Erase Blocks (32 Mbit)
System Performance Enhancements
-STS Status Output
Industry-Standard Packaging
-SSOP and TSOP (16 Mbit)
-SSOP (32 Mbit)
Cross-Compatible Command Support
-Intel Standard Command Set
-Common Flash Interface (CFI)
-Scaleable Command Set (SCS)
100,000 Block Erase Cycles
Enhanced Data Protection Features
-Absolute Protection with VPP = GND
-Flexible Block Locking
-Block Erase/Program Lockout during Power Transitions
Configurable x8 or x16 I/O
Automation Suspend Options
-Program Suspend to Read
-Block Erase Suspend to Program
-Block Erase Suspend to Read
ETOX™ V Nonvolatile Flash Technology