28F1602C3

Features: ` Flash Memory Plus SRAM-Reduces Memory Board Space Required, Simplifying PCB Design Complexity` Stacked Chip Scale Package Technology-Smallest Memory Subsystem Footprint-16-Mbit Flash + 2-Mbit SRAM:Area: 8 mm by 10 mm, Height: 1.4 mm-32-Mbit Flash + 4-Mbit SRAM,16-Mbit Flash + 4-Mbit SR...

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SeekIC No. : 004218196 Detail

28F1602C3: Features: ` Flash Memory Plus SRAM-Reduces Memory Board Space Required, Simplifying PCB Design Complexity` Stacked Chip Scale Package Technology-Smallest Memory Subsystem Footprint-16-Mbit Flash + 2...

floor Price/Ceiling Price

Part Number:
28F1602C3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

` Flash Memory Plus SRAM
-Reduces Memory Board Space Required, Simplifying PCB Design Complexity
` Stacked Chip Scale Package Technology
-Smallest Memory Subsystem Footprint
-16-Mbit Flash + 2-Mbit SRAM:
Area: 8 mm by 10 mm, Height: 1.4 mm
-32-Mbit Flash + 4-Mbit SRAM,
16-Mbit Flash + 4-Mbit SRAM:
Area: 8 mm by 12 mm, Height: 1.4 mm
` Advanced SRAM Technology
-70 ns Access Time
-Low Power Operation
-Low Voltage Data Retention Mode
` Flash Data Integrator (FDI) Software
-Real-Time Data Storage and Code
Execution in the Same Memory Device
-Full Flash File Manager Capability
` Advanced+ Boot Block Flash Memory
-90 ns 16-Mb Access Time at 2.7 V
-100 ns 32-Mb Access Time at 2.7 V
-Instant, Individual Block Locking
-128-bit Protection Register
-12 V Production Programming
-Ultra Fast Program and Erase Suspend
-Extended Temperature 40 °C to +85 °C
` Blocking Architecture
-Block Sizes for Code + Data Storage
-4-Kword Parameter Blocks (for data)
-64-Kbyte Main Blocks (for code)
-1,000,000 Erase Cycles per Block
` Low Power Operation
-Async Read Current: 9 mA
-Standby Current: 10 mA
-Automatic Power Saving Mode
` 0.25 mm ETOX™ VI Flash Technology
` Industry Compatibility
-Sourcing Flexibility and Stability




Specifications

Parameter

Maximum Rating

Extended Operating Temperature
During Read
During Flash Block Erase and Program
Temperature under Bias

40°C to +85°C

Storage Temperature

65°C to +125°C

Voltage on Any Ball (except F-VCC / S-VCC and F-VPP) with Respect to GND

0.5 V to +3.3 V(1)

F-VPP Voltage (for BLock Erase and Program) with Respect to GND

0.5 V to +13.5 V(1,2,4)

F-VCC / F-VCCQ / S-VCC Supply Voltage with Respect to GND

0.2V to +3.3 V

Output Short Circuit Current

100 mA(3)


NOTES:
1. Minimum DC voltage is 0.5 V on input/output balls. During transitions, this level may undershoot to 2.0 V for periods < 20 ns. Maximum DC voltage on input/output balls is F-VCC / F-VCCQ / S-VCC + 0.5 V which,during  ransitions, may overshoot toF-VCC / F-VCCQ / S-VCC + 2.0 V for periods < 20 ns.
2. Maximum DC voltage on F-VPP may overshoot to +14.0 V for periods < 20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. F-VPP voltage is normally 1.65 V3.3 V. Connection to supply of 11.4 V12.6 V can only be done for 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase. F-VPP may be connected to 12 V for a total of 80 hours maximum. See Section 3.9.1 for details.



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