Features: * Fast Read Access Time-150 ns * CMOS Technology for Low Power Dissipation- 30 mA Active- 100 m A Standby* Fast Byte Write Time-200 m s or 1 ms * Data Retention >200 years * High Endurance - Minimum 100,000 Erase/Write Cycles* Automatic Write Operation- Internal Control Timer- Auto-Cl...
28C64A: Features: * Fast Read Access Time-150 ns * CMOS Technology for Low Power Dissipation- 30 mA Active- 100 m A Standby* Fast Byte Write Time-200 m s or 1 ms * Data Retention >200 years * High Endura...
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VCC and input voltages w.r.t. VSS.......-0.6V to + 6.25V
Voltage on OE w.r.t. VSS .....................-0.6V to +13.5V
Voltage on A9 w.r.t. V SS ......................-0.6V to +13.5V
Output Voltage w.r.t. V SS................ -0.6V to VCC+0.6V
Storage temperature..........................-65 to +125
Ambient temp. with power applied.......-50 to +95
*Notice: Stresses above those listed under "Maximum Ratings"may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.