28C256TRT1FS-15

The 28C256TRT1FS-15 high density 256k-bit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C256TRT1FS-15 is capable of in-system electrical byte and page pro-grammability. It has a 64-Byte page programming function to make its erase and write operations faster. It also features data polling to indicate the completion of erase and program- ming operations.

The features of 28C256TRT1FS-15 are: (1)RAD-PAK(R) radiation-hardened against natural space radia-tion; (2)Total dose hardness: - > 100 Krad (Si), dependent upon space mission; (3)Excellent Single Event Effects: SELTH  LET: > 120 MeV/mg/cm2, SEUTH LET (read mode): > 90 MeV/mg/cm2, SEUTH  LET (write mode): > 18 MeV/mg/cm2; (4)Package: 28 pin RAD-PAK(R) flat pack, 28 pin RAD-PAK(R) DIP, JEDEC approved byte wide pinout; (5)High Speed: 120, 150 ns maximum access times available; (6)High endurance: 10,000 erase/write (in Page Mode), 10-year data  retention; (7)Page Write Mode: 1 to 64 bytes; (8)Low power dissipation: 15 mA active current (cycle = 1 s), 20 A standby current (CE = VCC ).

The following is about the maximum ratings of 28C256TRT1FS-15: (1)Supply Voltage (Relative to VSS): -0.6V min and +7.0V max; (2)Input Voltage (Relative to VSS): -0.51V min and +7.0V max; (3)Operating Temperature Range: -55 °C min and +125 °C max; (4)Storage Temperature Range: -65 °C min and +150 °C max.