2731-100M

SpecificationsMaximum Power DissipationDevice Dissipation @ 251 575 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) 65 VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 15.0 AMaximum TemperaturesStorage Temperature -65 to +200 Operating Junction Temperature +200 Descripti...

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SeekIC No. : 004217777 Detail

2731-100M: SpecificationsMaximum Power DissipationDevice Dissipation @ 251 575 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) 65 VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 15....

floor Price/Ceiling Price

Part Number:
2731-100M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 251                        575 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)                65 V
Emitter to Base Voltage (BVebo)                3.0 V
Collector Current (Ic)                               15.0 A
Maximum Temperatures
Storage Temperature                 -65 to +200
Operating Junction Temperature          +200



Description

The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. 2731-100M utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.




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