SpecificationsMaximum Power DissipationDevice Dissipation @ 251 575 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) 65 VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 15.0 AMaximum TemperaturesStorage Temperature -65 to +200 Operating Junction Temperature +200 Descripti...
2731-100M: SpecificationsMaximum Power DissipationDevice Dissipation @ 251 575 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) 65 VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 15....
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The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. 2731-100M utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.