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2729-170

SpecificationsMaximum Power DissipationDevice Dissipation @ 251 570 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) 65 VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 17 AMaximum TemperaturesStorage Temperature -65 to +200 Operating Junction Temperature +200 DescriptionT...

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2729-170: SpecificationsMaximum Power DissipationDevice Dissipation @ 251 570 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) 65 VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 17 A...

2729-170 Data Sheet

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Part Number:
2729-170
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 251               570 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)     65 V
Emitter to Base Voltage (BVebo)      3.0 V
Collector Current (Ic)                        17 A
Maximum Temperatures
Storage Temperature                      -65 to +200
Operating Junction Temperature     +200


Description

The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. 2729-170 utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.




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