2729-125

SpecificationsMaximum Power DissipationDevice Dissipation @ 251 ................................350 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)........................ 65 VEmitter to Base Voltage (BVebo)......................... 3.0 VCollector Current (Ic) ..........................

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SeekIC No. : 004217775 Detail

2729-125: SpecificationsMaximum Power DissipationDevice Dissipation @ 251 ................................350 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)........................ 65 VEmitter ...

floor Price/Ceiling Price

Part Number:
2729-125
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 251 ................................350 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)........................ 65 V
Emitter to Base Voltage (BVebo)......................... 3.0 V
Collector Current (Ic) ...........................................15 A
Maximum Temperatures
Storage Temperature........................... -65 to +200
Operating Junction Temperature..................... +200



Description

The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. 2729-125 utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.




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