SpecificationsMaximum Power DissipationDevice Dissipation @ 251 ................................350 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)........................ 65 VEmitter to Base Voltage (BVebo)......................... 3.0 VCollector Current (Ic) ..........................
2729-125: SpecificationsMaximum Power DissipationDevice Dissipation @ 251 ................................350 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)........................ 65 VEmitter ...
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The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. 2729-125 utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.