25TTS12FP

SCRs 1200 Volt 25 Amp

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SeekIC No. : 00199327 Detail

25TTS12FP: SCRs 1200 Volt 25 Amp

floor Price/Ceiling Price

Part Number:
25TTS12FP
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Breakover Current IBO Max : 350 A Rated Repetitive Off-State Voltage VDRM : 1200 V
Off-State Leakage Current @ VDRM IDRM : 0.5 mA Forward Voltage Drop : 1.25 V
Gate Trigger Voltage (Vgt) : 2 V Maximum Gate Peak Inverse Voltage : 10 V
Gate Trigger Current (Igt) : 45 mA Holding Current (Ih Max) : 100 mA
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Package / Case : TO-220
Packaging : Tube
Maximum Gate Peak Inverse Voltage : 10 V
Rated Repetitive Off-State Voltage VDRM : 1200 V
Off-State Leakage Current @ VDRM IDRM : 0.5 mA
Gate Trigger Voltage (Vgt) : 2 V
Holding Current (Ih Max) : 100 mA
Breakover Current IBO Max : 350 A
Forward Voltage Drop : 1.25 V
Gate Trigger Current (Igt) : 45 mA


Specifications

PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum average on-state current
I T(AV)
TC = 85 , 180° conduction half sine wave
16
A
Maximum RMS on-state current
IRMS
 
25
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
10 ms sine pulse, rated VRRM applied
300
10 ms sine pulse, no voltage reapplied
350
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
450
A2s
10 ms sine pulse, no voltage reapplied
630
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
6300
A2s
Maximum on-state voltage drop
VTM
16 A, TJ = 25
1.25
V
On-state slope resistance
rt
TJ = 125
12.0
m
Threshold voltage
V T(TO)
1.0
V
Maximum reverse and direct leakage current
IRM/IDM
TJ = 25 VR = Rated VRRM/VDRM
0.5
mA
TJ = 125
10
Holding current
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
-
100
Maximum latching current
IL
Anode supply = 6 V, resistive load
200
Maximum rate of rise of off-state voltage
dV/dt
 
500
V/s
Maximum rate of rise of turned-on current
dI/dt
 
150
A/s



Description

The 25TTS12FP High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved.   Connection DiagramPlastic material 94VRo.

25TTS12FP has been designed and qualified for industrial level.


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