24FC1025

Features: • Low-power CMOS technology:- Maximum write current 5 mA at 5.5V- Maximum read current 500 A at 5.5V- Standby current 100 nA, typical at 5.5V• 2-wire serial interface bus, I2C™ compatible• Cascadable for up to four devices• Self-timed erase/write cycle•...

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24FC1025 Picture
SeekIC No. : 004216813 Detail

24FC1025: Features: • Low-power CMOS technology:- Maximum write current 5 mA at 5.5V- Maximum read current 500 A at 5.5V- Standby current 100 nA, typical at 5.5V• 2-wire serial interface bus, I2C&...

floor Price/Ceiling Price

Part Number:
24FC1025
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low-power CMOS technology:
- Maximum write current 5 mA at 5.5V
- Maximum read current 500 A at 5.5V
- Standby current 100 nA, typical at 5.5V
• 2-wire serial interface bus, I2C™ compatible
• Cascadable for up to four devices
• Self-timed erase/write cycle
• 128-byte Page Write mode available
• 5 ms max. write cycle time
• Hardware write-protect for entire array
• Output slope control to eliminate ground bounce
• Schmitt Trigger inputs for noise suppression
• 1,000,000 erase/write cycles
• Electrostatic discharge protection > 4000V
• Data retention > 200 years
• 8-pin PDIP, SOIC packages
• Temperature ranges:
- Industrial (I): -40°C to +85°C





Pinout

  Connection Diagram




Specifications

Parameter Name Value
Density 1024K bit (x8)
Max. Clock Freq. 1 MHz
Page Size (bytes) 128
Write Protect Whole Array
Endurance 1,000,000
Op. Volt Range (V) 2.5 to 5.5
Temp Range (°C) -40°C to +85°C


Absolute Maximum Ratings(†)
VCC..............................................................................................................6.5V
All inputs and outputs w.r.t. VSS ........................................ -0.6V to VCC +1.0V
Storage temperature .............................................................65°C to +150°C
Ambient temperature with power applied.............................-40°C to +125°C
ESD protection on all ............................................................................... 4 kV

† NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.






Description

The Microchip Technology Inc. 24AA1025/24LC1025/ 24FC1025 (24XX1025*) is a 128K x 8 (1024K bit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.8V to 5.5V). It has been developed for advanced, low power applications such as personal communications or data acquisition. This device has both byte write and page write capability of up to 128 bytes of data. This device 24FC1025 is capable of both random and sequential reads. Reads may be sequential within address boundaries 0000h to FFFFh and 10000h to 1FFFFh. Functional address lines allow up to four devices on the same data bus. This allows for up to 4 Mbits total system EEPROM memory. This device is available in the standard 8-pin plastic DIP and SOIC packages.






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