24C08B

Features:

• Single supply with operation from 4.5-5.5V
• Low power CMOS technology
  - 1 mA active current typical
  - 10A standby current typical at 5.5V
• Organized as 4 or 8 blocks of 256 bytes(4 x 256 x 8) or (8 x 256 x 8)
• 2-wire serial interface bus, I²C^TMcompatible
• Schmitt trigger, filtered inputs for noise suppression
• Output slope control to eliminate ground bounce
• 100 kHz compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 16 bytes
• 2 ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• ESD protection > 4,000V
• 1,000,000 ERASE/WRITE cycles guaranteed
• Data retention > 200 years
• 8-pin DIP, 8-lead or 14-lead SOIC packages
• Available for extended temperature range
   - Automotive (E):      -40°C to +125°C


Pinout




Specifications

V_CC.....................................................................................7.0V
All inputs and outputs w.r.t. V_SS ............... -0.6V to VCC +1.0V
Storage temperature ..................................-65°C to +150°C
Ambient temp. with power applied ............ -65°C to +125°C
Soldering temperature of leads (10 seconds) ........... +300°C
ESD protection on all pins.............................................. 4 kV


Description

The Microchip Technology Inc. 24C08B/16B is an 8K or 16K bit Electrically Erasable PROM intended for use in extended/automotive temperature ranges. The device is organized as four or eight blocks of 256 x 8-bit memory with a 2-wire serial interface. The 24C08B/16B also has a page-write capability for up to 16 bytes of data.The 24C08B/16B is available in the standard 8-pin DIP and both 8-lead and 14-lead surface mount SOIC packages.