24C01B

Features:

• Single supply with 5.0V operation
• Low power CMOS technology
   - 1 mA active current typical
   - 10µA standby current typical at 5.0V
   - 5µA standby current typical at 5.0V
• Organized as a single block of 128 bytes (128 x 8)
   or 256 bytes (256 x 8)
• 2-wire serial interface bus, I²C compatible
• 100 kHz compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 8 bytes
• 2 ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• ESD protection > 3,000V
• 1,000,000 ERASE/WRITE cycles guaranteed
   Data retention > 200 years
• 8 pin DIP or SOIC package
• Available for extended temperature ranges
  - Automotive (E):      -40 to +125


Pinout




Specifications

Vcc...................................................................................7.0V
All inputs and outputs w.r.t. Vss.................-0.6V to Vcc+1.0V
Storage temperature.......................................-65 to 150
Ambient temperature under bias.....................-65 to 125
Soldering temperature of leads (10 seconds).............+300
ESD protection on all pins.............................................4kV

Description

The Microchip Technology Inc. 24C01B and 24C02B are 1K bit and 2K bit Electrically Erasable PROMs. The devices are organized as a single block of 128 x 8 bit or 256 x 8 bit memory with a 2-wire serial interface. The 24C01B and 24C02B also have page-write capability for up to 8 bytes of data. The 24C01B and 24C02B are available in the standard 8-pin DIP and an 8-pin surface mount SOIC package.

These devices 24C01B are for extended temperature applications only. It is recommended that all other applications use Microchip's 24LC01B/02B.