2470-120L

Features: SpecificationsDescription2470-120L is a kind of NPN power switching transistor.The typical applications include high inductance loads as used for solenoids and power inverters and switching regulators through 50 KHz. Here you can get some information about the features of 2470-120L.Firs...

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SeekIC No. : 004216737 Detail

2470-120L: Features: SpecificationsDescription2470-120L is a kind of NPN power switching transistor.The typical applications include high inductance loads as used for solenoids and power inverters and switchin...

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Part Number:
2470-120L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:






Specifications






Description

2470-120L is a kind of NPN power switching transistor.The typical applications include high inductance loads as used for solenoids and power inverters and switching regulators through 50 KHz.

Here you can get some information about the features of 2470-120L.First is about the contact metallization.The base and emitter is aluminum and the collector is alloy gold suitable for euectic mount.Then is complementary die: OTC2670.The last one is about the dimensions.The die size is 0.250*0.250*0.010 inch;the emitter bond area (E) is 0.185*0.020 inch;the base bond area (B) is 0.185*0.020 inch.

What comes next is about the electrical characteristics of 2470-120L at 25.The maximum ICEX (collector cutoff) is 100 A at VCE=150 V,VBE=-0.5 V.The maximum ICEX (collector cutoff) is 10 mA at VCE=150 V,VBE=-0.5 V to 150.The maximum IEBO (emitter cutoff) is 10A at VEB=8 V.The minimum BVCBO (collector base) is 200 Vdc at IC=0.5 mA.The minimum BVCEO (collector emitter) is 120 Vdc at IC=30 mA.The minimum hFE (DC current gain) is 50 and the maximum is 100 at IC=1 A,VCE=5 V.The minimum hFE (DC current gain) is 50 and the maximum is 110 at IC=10 A,VCE=2 V.The minimum hFE (DC current gain) is 10 at IC=30 A,VCE=3 V.The maximum VBE(sat) (emitter base saturation) is 1.3 Vdc at IC=10 A,IB=0.5 A and is 1.8 Vdc at IC=30 A,IB=3 A.The maximum VCE(sat) (collector saturation) is 0.6 Vdc at IC=10 A,IB=0.5 A and is 1.8 Vdc at IC=30 A,IB=0.5 A.The maximum Ton (td+tr) is 0.35 s and the maximum Toff (ts+tf) is 1.25 s at VC=20 V,IC=10 A,IB1=IB2=0.5 A.The maximum COB (output capacitance) is 750 pF at VCB=10 V,f=1 MHz.The minimum ft (small signal current gain) is 4 at IC=3 A,VCE=10 V,f=10 MHz.






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