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23N100

Features: •Conforms to SOT-227B outline•Low RDS (on) HDMOSTM process•Rugged polysilicon gate cell structure•Unclamped Inductive Switching (UIS) rated•Low package inductance•Fast intrinsic RectifierApplication• DC-DC converters• Battery chargers•...

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SeekIC No. : 004216360 Detail

23N100: Features: •Conforms to SOT-227B outline•Low RDS (on) HDMOSTM process•Rugged polysilicon gate cell structure•Unclamped Inductive Switching (UIS) rated•Low package induct...

23N100 Data Sheet

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Part Number:
23N100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier




Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1M
1000
1000
V
V
VGES
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IDM		 TC = 25
TC = 25; Note 1		 24N100
23N100
24N100
23N100
22
21
96
92
A
A
A
A
IAR TC = 25

24

A

EAR
EAS		 TC = 25
TC = 25
60
3
mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 2
5
V/ns
PD TC = 25
500
W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150



TL 1.6 mm (0.063 in) from case for 10 s
300
VISOL 50/60 Hz t = 1 min
IISOL 1 mA t = 1 s
2500
3000
V~
V~
Md Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight  
19
g



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