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23A008

SpecificationsMaximum Power Dissipation @ 25 5.0 Watts Maximum Voltage and CurrentBVces Collector to Emitter Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 400 mAMaximum TemperaturesStorage Temperature - 65 to + 200 Operating Junction Temperature+ 200 DescriptionThe 2...

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23A008: SpecificationsMaximum Power Dissipation @ 25 5.0 Watts Maximum Voltage and CurrentBVces Collector to Emitter Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 400 mAMaximu...

23A008 Data Sheet

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Part Number:
23A008
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Description



Specifications

Maximum Power Dissipation @ 25                                     5.0 Watts

Maximum Voltage and Current
BVces              Collector to Emitter Voltage                            50  Volts
BVebo              Emitter to Base Voltage                                  3.5 Volts
Ic                     Collector Current                                               400 mA
Maximum Temperatures

Storage Temperature                                                    - 65 to + 200  
Operating Junction Temperature                                              + 200  




Description

The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz.  This transistor is specifically designed for general Class A amplifier applications.  It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness.  The 23A008 uses a fully hermetic High Temperature
Solder Sealed package.




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