Features: · 4 Mbit of Flash Memory· Page Program (up to 256 Bytes) in 2 ms (typical)· Sector Erase (512 Kbit) in 2 s (typical)· Bulk Erase (4 Mbit) in 8 s (typical)· 2.7 V to 3.6 V Single Supply Voltage· SPI Bus Compatible Serial Interface· 20 MHz Clock Rate (maximum)· Deep Power-down Mode 1 mA (t...
23755: Features: · 4 Mbit of Flash Memory· Page Program (up to 256 Bytes) in 2 ms (typical)· Sector Erase (512 Kbit) in 2 s (typical)· Bulk Erase (4 Mbit) in 8 s (typical)· 2.7 V to 3.6 V Single Supply Vol...
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· 4 Mbit of Flash Memory
· Page Program (up to 256 Bytes) in 2 ms (typical)
· Sector Erase (512 Kbit) in 2 s (typical)
· Bulk Erase (4 Mbit) in 8 s (typical)
· 2.7 V to 3.6 V Single Supply Voltage
· SPI Bus Compatible Serial Interface
· 20 MHz Clock Rate (maximum)
· Deep Power-down Mode 1 mA (typical)
· Electronic Signature
· More than 100,000 Erase/Program Cycles per Sector
· More than 20 Year Data Retention
Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied.
Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Symbol |
Parameter |
Min. |
Max. |
Unit |
TSTG |
Storage Temperature |
65 |
150 |
|
TLEAD |
Lead Temperature during Soldering (20 seconds max.)1 |
235 |
||
VIO |
Input and Output Voltage (with respect to Ground) |
0.6 |
4.0 |
V |
VCC |
Supply Voltage |
0.6 |
4.0 |
V |
VESD |
Electrostatic Discharge Voltage (Human Body model) 2 |
2000 |
2000 |
V |
Note:
1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )
The M25P40 is a 4 Mbit (512K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide.
Thus, the whole memory can be viewed as consisting of 2048 pages, or 524,288 bytes.
The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.