2324-20

The 2324-20 is a designed as common base transistor capable of providing 20watts of class C, RF output power over the band 2300 to 2400MHz. This transistor is specifically designed for microwave broadband class C amplifier applications. 2324-20 includes input and output pre matching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. This transistor uses a fully hermetic high temperature solder sealed package.

Some absolute maximum ratings of 2324-20 have been concluded into several points as follow. (1)Its maximum power dissipation at 25°C would be 58watts. (2)Its collector to emitter voltage would be 40 volts. (3)Its emitter to base voltage would be 3.5volts. (4)Its collector current would be 3.0amps. (5)Its storage temperature would be from -65°C to +200°C. (6)Its operating junction temperature would be max +200°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2324-20 at 25°C are concluded as follow. (1)Its power output would be min 20 watts. (2)Its power input would be max 4.0 watts. (3)Its power gain would be min 7.0dB. (4)Its efficiency would be typ 40%. (5)Its load mismatch tolerance would be max 10:1. (6)Its emitter to base breakdown voltage would be min 3.5V. (7)Its collector to emitter breakdown voltage would be min 40V. (8)Its DC current gain would be min 10 and max 100. (9)Its thermal resistance would be max 3.0°C/W.

GHz technology inc. reserves the right to make changes without further notice. GHz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. If you have any question or suggestion or want to know more information please contact us for details. Thank you!