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21TT100

Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Increased ruggedness for reverse avalanche capability• RBSOA available• Negligible switchin...

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21TT100: Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Inc...

21TT100 Data Sheet

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Part Number:
21TT100
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level




Application

• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems




Specifications

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TC = 142 °C, rectangular waveform 20 A
Maximum peak one cycle
non-repetitive surge current
at TJ = 175 		IFSM 5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated VRRM applied		 660
10 ms sine or 6 ms rect. pulse 220
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 60 mH 67.5 mJ
Repetitive avalanche current IAR Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8		 IAS at
TJ max.		 A





Description

High Performance 21TT100 Schottky Generation 5.0, 20 A




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