216QP4CANA12PH

The 216QP4CANA12PH is designed as one kind of 128MB - 16Mx72 DDR SDRAM memory module that is consists of nine 16Mx8 DDR SDRAMs in 66 pin TSOP package mounted on a 200 Pin FR4 substrate.

Features of the 216QP4CANA12PH are:(1)Double-data-rate architecture; (2)DDR200 and DDR266; (3)Bi-directional data strobes (DQS); (4)Differential clock inputs (CK & CK#); (5)Programmable Read Latency 2,2,5 (clock); (6)Programmable Burst Length (2,4,8); (7)Programmable Burst type (sequential & interleave); (8)Edge aligned data output, center aligned data input; (9)Auto and self refresh; (10)Serial presence detect; (11)Power Supply: 2.5V ± 0.20V; (12)JEDEC standard 200 pin SO-DIMM package.

The absolute maximum ratings of the 216QP4CANA12PH can be summarized as:(1)Voltage on any pin relative to VSS: -0.5 to 3.6 V;(2)Voltage on VCC supply relative to VSS: -1.0 to 3.6 V;(3)Storage Temperature: -55 to +150 °C;(4)Power Dissipation: 9 W;(5)Short Circuit Current: 50 mA.

The electrical characteristics of the 216QP4CANA12PH can be summarized as:(1)Access window of DQs from CK/CK#: -0.75 to +0.75 ns;(2)CK high-level width: 0.45 to 0.55 tCK;(3)CK low-level width: 0.45 to 0.55 tCK;(4)DQ and DM input hold time relative to DQS: 0.5 ns;(5)DQ and DM input setup time relative to DQS: 0.5 ns;(6)DQ and DM input pulse width (for each input): 1.75 ns;(7)Access window of DQS from CK/CK#: -0.60 to +0.75 ns;(8)DQS input high pulse width: 0.35 tCK;(9)LOAD MODE REGISTER command cycle time: 15 ns;(10)Address and Control input pulse width (for each input): 2.2 ns. If you want to know more information such as the electrical characteristics about 216QP4CANA12PH, please download the datasheet in www.seekic.com or www.chinaicmart.com .