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20DBL0629

Features: Integrated Doubler and Power AmplifierExcellent Saturated Output Stage+26.0 dBm Output Power50.0 dBc Fundamental Suppression100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (I...

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20DBL0629: Features: Integrated Doubler and Power AmplifierExcellent Saturated Output Stage+26.0 dBm Output Power50.0 dBc Fundamental Suppression100% On-Wafer RF, DC and Output Power Testing100% Visual Inspect...

20DBL0629 Data Sheet

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Part Number:
20DBL0629
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Integrated Doubler and Power Amplifier
Excellent Saturated Output Stage
+26.0 dBm Output Power
50.0 dBc Fundamental Suppression
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010


Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 800 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (RF Pin) TBD
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier.

20DBL0629 provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. 20DBL0629 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Pointto- Point Radio, LMDS, SATCOM and VSAT applications.




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