Features: SpecificationsDescription The 2023 Series are Air Dielectric Directional Couplers Low Loss, Octave Bandwidth.Features of the 2023 Series include Air Dielectric for Low Loss;Frequency Range: 1.0 to 18 GHz;Octave Bandwidths;Meets MIL-E-5400 and MIL-E-16400 Environments. 2023 Series feature...
2023 Series: Features: SpecificationsDescription The 2023 Series are Air Dielectric Directional Couplers Low Loss, Octave Bandwidth.Features of the 2023 Series include Air Dielectric for Low Loss;Frequency Range...
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The 2023 Series are Air Dielectric Directional Couplers Low Loss, Octave Bandwidth.Features of the 2023 Series include Air Dielectric for Low Loss;Frequency Range: 1.0 to 18 GHz;Octave Bandwidths;Meets MIL-E-5400 and MIL-E-16400 Environments.
2023 Series feature compact packaging and four-port construction. This combination permits flexibility in system designs. They are intended for test and measurement setups as well as for system use.Temperature range is -54° to +110°C. 2023 Series incorporate three miniature, low VSWR SMA jack connectors. Isolated port is terminated with 1/2 watt, 50 ohm load.When making measurements such as RF sensitivity, the user has to adjust the RF signal level until the required SINAD is obtained. The RF level set is then the required sensitivity. The 2023 series Option 12 SINAD Measurement has a unique automatic mode whereby the required SINAD is set (to, say, 20 dB) by the user and the signal generator then automatically lowers its RF output level from a preset value until the set SINAD is obtained. This can considerably simplify both manual testing and automatic testing.
This document gives a full description of the types of memory devices contained in the 2023 series signal generator and information on how to clear memory stores for when the instrument is removed from a secured application.This technical note describes the methods available to erase the memory settings in the 2023 series signal generators and then goes on to describe the types of memory used.A full description of each memory type is given indicating which sub-assembly the device(s) is located with its reference designator. A brief description of the contents of the device(s) is given.The statement of volatility indicates where memory is maintained or lost during power-down. The statement of accessibility indicates whether or not the memory can be accessed, either by a user or service personnel.
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