DescriptionThe 2015M is an internally matched,common base transistor capable of providing 15 watts of CW RF output power across the 1000-2000 MHz band.This transistor is specifically designed for telecommunication and microwave amplifier applications. 2015M utilizes gold metallization and diffused...
2015M: DescriptionThe 2015M is an internally matched,common base transistor capable of providing 15 watts of CW RF output power across the 1000-2000 MHz band.This transistor is specifically designed for te...
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The 2015M is an internally matched,common base transistor capable of providing 15 watts of CW RF output power across the 1000-2000 MHz band.This transistor is specifically designed for telecommunication and microwave amplifier applications. 2015M utilizes gold metallization and diffused ballasting to provide high reliability and supreme ruggedness.
The absolute maximum ratings of the 2015M can be summarized as:(1)maximum power dissipation@25 case temperature:50W; (2)maximum voltage and current :50V(collector to emitter voltage);3.5V(emitter to base voltage);3.0A(collector current); (3)storage temperature:-65~150; (4)operating junction temperature:200.
If you want to know more information about 2015M such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.