2005

The 2005 is a designed as a common base transistor capable of providing 5 watts class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic high temperature solder sealed package.

Some absolute maximum ratings of 2005 have been concluded into several points as follow. (1) Its maximum power dissipation at 25°C would be 20 watts. (2) Its collector to emitter voltage would be 50 volts. (3) Its emitter to base voltage would be 3.5 volts. (4) Its collector current would be 1.0 amps. (5) Its storage temperature would be from -65°C to +200°C. (6) Its operating junction temperature would be max +200°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics at 25°C about 2005. (1) Its power output would be min 5 watts. (2) Its power input would be max 0.8 watts. (3) Its power gain would be min 8.0dB and typ 8.5dB. (4) Its collector efficiency would be typ 40%. (5) Its load mismatch tolerance would be max 30:1. (6) Its emitter to base breakdown voltage would be min 3.5V. (7) Its collector to emitter breakdown voltage would be min 50V. (8) Its collector to base breakdown voltage would be min 45V. (9) Its DC current gain would be min 20. (10) Its output capacitance would be typ 7.5pF. (11) Its thermal resistance would be max 8.5°C/W.

GHz technology inc. reserves the right to make changes without further notice. GHz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. If you have any question or suggestion or want to know more information about 2005 please contact us for details. Thank you!