Features: ·High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.)·Low Series Resistance : rs = 0.35 Ω (Typ.)·Useful for Small Size TunerSpecifications CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature TJ 125 Storage Temperature Range Tstg ...
1SV314: Features: ·High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.)·Low Series Resistance : rs = 0.35 Ω (Typ.)·Useful for Small Size TunerSpecifications CHARACTERISTIC SYMBOL RATING UNIT ...
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CHARACTERISTIC | SYMBOL | RATING | UNIT |
Reverse Voltage | VR | 10 | V |
Junction Temperature | TJ | 125 | |
Storage Temperature Range | Tstg | −55~125 |
The 1SV314 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device. 1SV314 has three points of features:(1)high capacitance ratio: C0.5V / C2.5V = 2.5 (typ.);(2)low series resistance: rs = 0.35 (typ.);(3)useful for small size tuner.
The absolute maximum ratings of the 1SV314 can be summarized as:(1)reverse voltage: 10 V;(2)junction temperature: 125 ;(3)storage temperature range: -55 to +125 .
The electrical characteristics of 1SV314 can be summarized as:(1)reverse voltage: 10 V;(2)reverse current: 3 nA;(3)capacitance: 7.3 to 8.4 pF;(4)capacitance ratio: 2.4 to 2.5;(5)series resistance: 0.35 . If you want to know more information such as the electrical characteristics about the 1SV314, please download the datasheet in www.seekic.com or www.chinaicmart.com.