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1SV312

Application• Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.• Low capacitance: CT = 0.25 pF (typ.)• Low series resistance: rs = 3 (typ.)Specifications Characteristics Symbol Rating Unit Reverse volt...

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1SV312: Application• Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.• Low capacitance: CT = 0.25 pF (typ.)• Low series...

1SV312 Data Sheet

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Part Number:
1SV312
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.
• Low capacitance: CT = 0.25 pF (typ.)
• Low series resistance: rs = 3 (typ.)


Specifications

Characteristics Symbol Rating Unit
Reverse voltage VR 50 V
Forward current IF 50 mA
Junction temperature Tj 125
Storage temperature range Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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