1SS5004WS

The 1SS5004WS is a kind of silicon epitaxial planar diode high voltage switching diode. The Characteristics of 1SS5004WS can be summarized as (1)forward voltage at I F = 20 mA/ at I F = 100 mA/ at I F = 200 mA V F: 0.87/1 /1.25 V; (2)reverse current at V R = 240 V I R: 100nA; (3)reverse breakdown voltage at IR = 100 A V (BR)R: 350V; (4)total capacitance at V R = 0, f = 1 MHz C T: 5 pF; (5)reverse recovery time at I F = IR = 30 mA, i rr = 0.1 I R , R L = 100 t rr: 50 ns.

The features of 1SS5004WS can be summarized as (1)fast switching speed; (2)high conductance; (3)high reverse breakdown voltage rating.

The absolute maximum ratings of 1SS5004WS are (1)repetitive peak reverse voltage V RRM: 350 V; (2)working peak reverse voltage V RWM: 300 V; (3)reverse voltage V R: 300 V; (4)continuous forward current IF: 225 mA; (5)peak repetitive forward current IFRM: 625 mA; (6)non-repetitive peak forward surge current att = 1 s/att = 1 s I FSM: 4/1 A; (7)power dissipation Pd: 350 mW; (8)storage temperature range T stg: - 65 to + 150°C; (9)junction temperature T j : 150°C.