Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 30 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA Surge current (10 ms) IFSM 1 ...
1SS424: Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 30 V Reverse voltage VR 20 V Maximum (peak) forward current IFM...
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SpecificationsDescriptionThe 1SS400TE61 is designed as one kind of switching diode device that can...
Characteristic |
Symbol |
Rating |
Unit |
Maximum (peak) reverse voltage |
VRM |
30 |
V |
Reverse voltage |
VR |
20 |
V |
Maximum (peak) forward current |
IFM |
300 |
mA |
Average forward current |
IO |
200 |
mA |
Surge current (10 ms) |
IFSM |
1 |
A |
Power dissipation |
P * |
150 |
mW |
Junction temperature |
Tj |
125 |
|
Storage temperature range |
Tstg |
-55~125 |
|
Operating temperature range |
Topr |
-40~100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a glass-epoxy circuit board of 20*20 mm,pad dimensions of 4*4 mm.