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1SS413

Features: • Low forward voltage : VF (3) = 0.50V (typ.)• Low reverse current : IR= 0.5A (max)• Small total capacitance : CT = 3.9pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage ...

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1SS413: Features: • Low forward voltage : VF (3) = 0.50V (typ.)• Low reverse current : IR= 0.5A (max)• Small total capacitance : CT = 3.9pF (typ.)Specifications Characteristic S...

1SS413 Data Sheet

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Part Number:
1SS413
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low forward voltage : VF (3) = 0.50V (typ.)
• Low reverse current : IR= 0.5A (max)
• Small total capacitance : CT = 3.9pF (typ.)


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
100
mA
Average forward current
IO
50
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P*
100
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 * 20 mm, pad dimension of 4 * 4 mm.




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