Features: • Low forward voltage : VF (3) = 0.50V (typ.)• Low reverse current : IR= 0.5A (max)• Small total capacitance : CT = 3.9pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage ...
1SS413: Features: • Low forward voltage : VF (3) = 0.50V (typ.)• Low reverse current : IR= 0.5A (max)• Small total capacitance : CT = 3.9pF (typ.)Specifications Characteristic S...
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Characteristic |
Symbol |
Rating |
Unit |
Maximum (peak) reverse Voltage |
VRM |
25 |
V |
Reverse voltage |
VR |
20 |
V |
Maximum (peak) forward current |
IFM |
100 |
mA |
Average forward current |
IO |
50 |
mA |
Surge current (10ms) |
IFSM |
1 |
A |
Power dissipation |
P* |
100 |
mW |
Junction temperature |
Tj |
125 |
|
Storage temperature range |
Tstg |
−55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 * 20 mm, pad dimension of 4 * 4 mm.