Features: · Power dissipation comparable toSOT23· Low forward voltage· Guard ring protected· Ultra small SMD package.Application· Ultra high speed switching· Voltage clamping· Protection circuits· Blocking diodes.Specifications SYMBOL PARAMETER CONDITIONS MI...
1PS89SB16: Features: · Power dissipation comparable toSOT23· Low forward voltage· Guard ring protected· Ultra small SMD package.Application· Ultra high speed switching· Voltage clamping· Protection circuits· B...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
Per diode unless otherwise specified | |||||
VR | continuous reverse voltage | - | 30 | V | |
IF | continuous forward current | - | 200 | mA | |
IFRM | repetitive peak forward current | tp 1 s; d 0.5 | - | 300 | mA |
IFSM | non-repetitive peak forward current | tp < 10 ms | - | 600 | mA |
Ptot | total power dissipation (per package) | Tamb 25 °C | - | 200 | mW |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 125 | °C | |
Tamb | operating ambient temperature | -65 | +125 | °C |