1PS79SB30

Features: · Very low forward voltage· Very low reverse current· Guard ring protected· Ultra small SMD package.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes· Low power consumption applications (e.g. hand-heldapplications).Specifications SYMBOL ...

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SeekIC No. : 004214071 Detail

1PS79SB30: Features: · Very low forward voltage· Very low reverse current· Guard ring protected· Ultra small SMD package.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking...

floor Price/Ceiling Price

Part Number:
1PS79SB30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Very low forward voltage
· Very low reverse current
· Guard ring protected
· Ultra small SMD package.





Application

· Ultra high-speed switching
· Voltage clamping
· Protection circuits
· Blocking diodes
· Low power consumption applications (e.g. hand-heldapplications).





Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VR continuous reverse voltage - 40 V
IF continuous forward current - 200 mA
IFRM repetitive peak forward current tp 1 s; d 0.5 - 300 mA
IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
- 1 A
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C





Description

The 1PS79SB30 is designed as one kind of schottky barrier diode that has some points of features: (1)very low forward voltage; (2)very low reverse current; (3)guard ring protected; (4)ultra small SMD package. And this device can be used in wide range of applications such as (1)Ultra high-speed switching; (2)Voltage clamping; (3)Protection circuits; (4)Blocking diodes; (5)Low power consumption applications of the 1PS79SB30 e.g. hand-held; (6)applications).

The absolute maximum ratings of the 1PS79SB30 can be summarized as:(1)continuous reverse voltage: 40 V;(2)continuous forward current: 200 mA;(3)repetitive peak forward current: 300 mA;(4)non-repetitive peak forward current: 1 A;(5)storage temperature: -65 to +150 °C;(6)junction temperature: 150 °C;(7)operating ambient temperature: -65 to +150 °C.

The electrical characteristics of the 1PS79SB30 can be summarized as:(1)thermal resistance from junction to ambient: 450 K/W;(2)diode capacitance: 20 pF;(3)continuous reverse current: 0.5 uA. This device is not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. If you want to know more information such as the electrical characteristics about the 1PS79SB30, please download the datasheet in www.seekic.com or www.chinaicmart.com.



Planar Schottky barrier diode encapsulated in a SC-79(SOD523) ultra small SMD plastic package.




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