1PS10SB63

Features: · Very low diode capacitance· Low forward voltage· Leadless ultra small plastic package (1.0 mm ×0.6 mm ×0.5 mm)· Boardspace 1.17 mm2 (approx. 10% of SOT23)· Power dissipation comparable to SOT23.Application` Ultra high-speed switching` High frequency detection` Zero bias detection` Mobi...

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1PS10SB63 Picture
SeekIC No. : 004214029 Detail

1PS10SB63: Features: · Very low diode capacitance· Low forward voltage· Leadless ultra small plastic package (1.0 mm ×0.6 mm ×0.5 mm)· Boardspace 1.17 mm2 (approx. 10% of SOT23)· Power dissipation comparable t...

floor Price/Ceiling Price

Part Number:
1PS10SB63
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Very low diode capacitance
· Low forward voltage
· Leadless ultra small plastic package (1.0 mm ×0.6 mm ×0.5 mm)
· Boardspace 1.17 mm2 (approx. 10% of SOT23)
· Power dissipation comparable to SOT23.



Application

` Ultra high-speed switching
` High frequency detection
` Zero bias detection
` Mobile communication, digital (still) cameras, PDA's and PCMCIA cards.



Specifications

PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT
Continuous reverse voltage VR   - 5 V
Continuous forward current IF   - 20 mA
repetitive peak forward current IFRM tp 1 ms; = 0.25 - 400 mA
non-repetitive peak forward current IFSM tp = 8.3 ms half sinewave;
JEDEC method
- 550 mA
storage temperature Tstg   -65 +150
junction temperature Tj   - 150



Description

An epitaxial Schottky barrier diode of the 1PS10SB63 encapsulated in a SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.


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