1N7066SMS

Features: • Hyper Fast Reverse Recovery: 30ns Maximum4/• High Surge Current: 325 A Maximum• Hermetically Sealed• Low Forward Voltage Drop .95 @10A• Void Free Chip Construction• Solid Silver Leads• Available in Axial & Square Tab Versions• TX, TXV...

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SeekIC No. : 004213888 Detail

1N7066SMS: Features: • Hyper Fast Reverse Recovery: 30ns Maximum4/• High Surge Current: 325 A Maximum• Hermetically Sealed• Low Forward Voltage Drop .95 @10A• Void Free Chip Const...

floor Price/Ceiling Price

Part Number:
1N7066SMS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

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Product Details

Description



Features:

• Hyper Fast Reverse Recovery: 30ns Maximum4/
• High Surge Current: 325 A Maximum
• Hermetically Sealed
• Low Forward Voltage Drop .95 @10A
• Void Free Chip Construction
• Solid Silver Leads
• Available in Axial & Square Tab Versions
• TX, TXV, and S-Level Screening Available 2/
• Axial Lead Higher Current Replacements for: 1N5807, 1N5809, 1N5811
• Possible SMS Replacements for Stud Mount : 1N5812, 1N5814, 1N5816



Specifications

RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
And
DC Blocking Voltage
1N7066
1N7067
1N7068
VRRM
VRWM
VR
50
100
150
Volts
Average Rectified Forward Current (Axial TL 55°C; SMS TEC 100°C ) 5/
IO
10
Amps
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
IFSM
325
Amps
Operating & Storage Temperature
TJ and TSTG
-65 to +175
Thermal Resistance
Junction to Lead for Axial, L =.125"
Junction to End Tab for Surface Mount
RJL
RJE
8
4.5
/W

NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ IF = 1A, IR = 1A, IRR = 0.1A, TA = 25°C
5/ Operating at higher Io currents may be achieved based on specific application and device mounting if Tj is maintained below 175ºC.




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