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1N6705R

Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed surface mount power package· Low package inductance· Very low thermal resistance· Available as standard polarity (strap-to-anode, 1N6705) and reverse polarit...

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SeekIC No. : 004213835 Detail

1N6705R: Features: · passivated mesa structure for very low leakage currents· Epitaxial structure minimizes forward voltage drop· Hermetically sealed surface mount power package· Low package inductance· Very...

1N6705R Data Sheet

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Part Number:
1N6705R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· passivated mesa structure for very low leakage currents
· Epitaxial structure minimizes forward voltage drop
· Hermetically sealed surface mount power package
· Low package inductance
· Very low thermal resistance
· Available as standard polarity (strap-to-anode, 1N6705) and reverse polarity (strap-to-cathode: 1N6705R)


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 400 Volts
Working Peak Reverse Voltage VRWM 400 Volts
DC Blocking Voltage VR 400 Volts
Average Rectified Forward Current, Tc£ 125°C IF(ave) 20 Amps
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 100 Amps
Junction Temperature Range Tj -65 to +175 °C
Storage Temperature Range Tstg -65 to +175 °C
Thermal Resistance, Junction to Case: JC 2.0 (typ. 1.6) °C/W



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