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1N6692US

Features: •Replaces DO-4 and DO-5•Ultra Fast Recovery•PIV to 1200 Volts•Low Reverse Leakage•Hermetically Sealed Void-Free Construction3/•Monolithic Single Chip Construction•High Surge Rating•Low Thermal Resistance•Available in Surface Mount Ver...

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1N6692US: Features: •Replaces DO-4 and DO-5•Ultra Fast Recovery•PIV to 1200 Volts•Low Reverse Leakage•Hermetically Sealed Void-Free Construction3/•Monolithic Single Chip Co...

1N6692US Data Sheet

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Part Number:
1N6692US
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Description



Features:

•Replaces DO-4 and DO-5
•Ultra Fast Recovery
•PIV to 1200 Volts
•Low Reverse Leakage
•Hermetically Sealed Void-Free Construction3/
•Monolithic Single Chip Construction
•High Surge Rating
•Low Thermal Resistance
•Available in Surface Mount Versions (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129).
•TX, TXV, and S-Level Screening Available2


Specifications

Maximum Ratings Symbol Value Units
Peak Repetitive Reverse and
DC Blocking Voltage		 1N6690 & 1N6690US
1N6691 & 1N6691US
1N6692 & 1N6692US
1N6693 & 1N6693US		 VRRM
VRWM
VR		 600
800
1000
1200		 Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 100)		 Io 20 Amps
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25)		 IFSM 375 Amps
Operating & Storage Temperature Top & Tstg -65 to +175
Maximum Thermal Resistance
Junction to Leads, L = 3/8 "
Junction to End Tab		 RJL
RJE		 3.0
2.5		 /W
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability Contact Factory. 2/ Screening Based on MIL-PRF-19500. Specifics Available on Request. 3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500


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