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1N6690US

Features: • Replaces DO-4 and DO-5• Ultra Fast Recovery• PIV to 1200 Volts• Low Reverse Leakage• Hermetically Sealed Void-Free Construction 1/• Monolithic Single Chip Construction• High Surge Rating• Low Thermal Resistance• Available in Surface...

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1N6690US: Features: • Replaces DO-4 and DO-5• Ultra Fast Recovery• PIV to 1200 Volts• Low Reverse Leakage• Hermetically Sealed Void-Free Construction 1/• Monolithic Single ...

1N6690US Data Sheet

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Part Number:
1N6690US
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Replaces DO-4 and DO-5
• Ultra Fast Recovery
• PIV to 1200 Volts
• Low Reverse Leakage
• Hermetically Sealed Void-Free Construction 1/
• Monolithic Single Chip Construction
• High Surge Rating
• Low Thermal Resistance
• Available in Surface Mount (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129).
• TX, TXV and Space Level Screening Available



Specifications

Maximum Ratings
SYMBOL
VALUE
UNITS
Peak Repetitive Reverse and                          1N6690 & 1N6690US
DC Blocking Voltage                                        1N6691 & 1N6691US
                                                                       1N6692 & 1N6692US
                                                                       1N6693 & 1N6693US


VRRM
VRWM
VR
600
800
1000
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TC = 100
Io
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25)
IFSM
375
Amps
Operating and Storage Temperature
Top & Tstg
-65 TO +175
Maximum Thermal Resistance
Junction to Lead, L = 3/8"
Junction to End Tab
RJL
RJE
3.0
2.5
/W



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