Features: • Popular JEDEC registered 1N6626 to 1N6631 series• Voidless hermetically sealed glass package• Extremely robust construction• Triple-layer passivation• Internal Category I Metallurgical bonds• JAN, JANTX, and JANTXV available per MIL-PRF-19500/590...
1N6626: Features: • Popular JEDEC registered 1N6626 to 1N6631 series• Voidless hermetically sealed glass package• Extremely robust construction• Triple-layer passivation• Inter...
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• Popular JEDEC registered 1N6626 to 1N6631 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal "Category I" Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-19500/590
• Further options for screening in accordance with MIL-PRF-19500 for JANS by using a "MSP" prefix, e.g. MSP6626, MSP6629, etc.
• Surface mount equivalents also available in a square end-cap MELF onfiguration with "US" suffix (see separate data sheet for 1N6626US hru 1N6631US)
• Junction Temperature: -65 to +175
• Storage Temperature: -65 to +175
• Peak Forward Surge Current @ 25: 75A (except 1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
• Average Rectified Forward Current (IO) at TL= +75 (L=.375 inch from body):
1N6626 thru 1N6628 4.0A
1N6629 thru 1N6630 3.0A
1N6631 2.5A
(Derate linearly at 1.0%/ for TL> +75)
• Average Rectified Forward Current (IO) at TA=25:
1N6626 thru 1N6628 2.0A
1N6629 thru 1N6631 1.4A
(Derate linearly at 0.67%/ for TA>+25. This IO rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.)
• Thermal Resistance L= 0.375 inch (RJL): 22/W
• Capacitance at VR= 10 V: 40 pF
• Solder temperature: 260 for 10 s (maximum)
This "Ultrafast Recovery" rectifier diode of the 1N6626 series is military qualified to MIL-PRF-19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers of the 1N6626 for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.